透過型位相シフトマスクを用いたコンタクト露光法

概要

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This paper presents a possibility of the application of phase shifting on the traditional contact photolithography. The 180° phase-shifters made by SiNx thin films on the transparent glasses is used to define patterns. In order to create dark or opaque areas on the mask, the destructive interference between phase-shifters and glass areas is the most important factor. The thickness of the photoresist patterns is periodically varied between Onm and approximately 500nm by increasing the thickness of the phase-shifters. The period of the change in the photoresist thickness have a dependence on the UV exposure wavelength. The resolution of the photolithography was ca. 1μm. Therefore, it shows that the phase shifting can be applied on the contact photolithography, and this process could be used as a sub-micron lithography process.
香川高等専門学校の論文
2003-06-30