Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions
スポンサーリンク
概要
著者
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Bai D‐j
九大 大学院
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Bai Dong-ju
Dept.of Electronic Device Eng. Grad.school Of Information Sci.and Electrical Eng. Kyushu Univ.
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Baba Akiyoshi
Grad.school Of Information Sci.and Electrical Eng. Kyushu Univ.
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Kawase Tomohiro
Dept.of Electronic Device Eng. Grad.school Of Information Sci.and Electrical Eng. Kyushu Univ.
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BABA Akiyoshi[et
Grad.School of Information Sci.and Electrical Eng.,Kyushu Univ.
関連論文
- Tapered-Surface Etching of GaAs Utilizing Low-Energy Ion Bombardment Effect
- Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions
- Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions