<総説論文>MRAM型構造の作製と磁気特性

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The characteristic points of MRAM are compared with those of DRAM, Flash memory,SRAM, and FeRAM. The differences in PSV-MRAM and MTJ-MRAM are discussed in termsof the directions of sense current, CIP or CPP, and connections of CMOS with MR elements.An MRAM-type structure was accomplished with three layers of PSV element, NiFe soft layer(6nm) / Cu non-magnetic layer (3-6nm) / Co hard magnetic layer (4nm) on Si-wafer. Each PSVelement of 80nm X 150nm was sandwiched by a sense line and a word line at the intersection ofthese lines. Furthermore, switching phenomena, which were observed in magnetic hysteresisloop by using PSV thin films, are also discussed along with the size limitation of PSV dots.
秋田大学の論文