面発光レーザアレイ
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概要
- 論文の詳細を見る
A vertical cavity surface emitting laser at a wavelength of 0.85μm was developed. A laser array with the mesa structure on p-type (100) GaAs substrate has a high uniformity and a high output optical power larger than 6mW. The threshold current was almost temperature independent between 25℃ and 70℃. The lifetime was estimated to be longer than 30000 hour at a temperature of 50℃ and 1mW output power. The polarization was controlled for the device with strain quantum wells grown on the (311)B substrate with un-isotropic optical gain.
- 湘南工科大学の論文
- 2002-03-18