太陽電池表面パッシベーションの研究
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概要
- 論文の詳細を見る
Improvement of surface passivation technique for crystalline silicon solar cells was studied. To reduce surface recombination velocity, the hydrogen radical annealing method was introduced as a post annealing method for solar cells. The effective lifetime of minority carrier effectively increased with very quickly by hydrogen radical annealing. The surface recombination velocity was reduced to 1cm/s under the bias light intensity of 80m W/cm^2 by SiN_x : H/SiO_2 double layer passivation structure with hydrogen radical annealing. The results of C-V measurement suggested that both the decrease of Dit and field effect by positive charges in SiN_x : H layer improved the passivation characteristics. The combination of thin SiO_2 (80A) and SiN_x : H (600A) showed excellent passivation properties as well as good anti-reflection characteristics.
- 湘南工科大学の論文
- 1999-03-25