シリカガラスのエキシマレーザ誘起欠陥に及ぼす電界の影響

概要

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The defect species induced in pure-silica glasses by excimer laser irradiation strongly depend on the stoichiometry, or the absolute deficiency or surplus of oxygen atoms to silicon atoms. Various laser-induced defects are classfied into three types defects, i.e., neutral defects [e.g., oxygen vacancies (≡Si-Si≡), and peroxy linkage (≡Si-O-O-Si≡)], ionized defects (e.g., ≡Si-O^-, ≡Si^-, and ≡Si^+), and paramagnetic defects [e.g., E' center (≡Si・), nonbridging oxygen hole center (NBOHC; ≡Si-O・), and peroxy radical (≡Si-O-O・)] and confirmed by electon-spin resonance (ESR) observations, optical-absorption measurements, photoluminescence (PL) measurements, and theoretical calculations. There are many experimental evidences for neutral and paramagnetic defects. However, little direct experimental evidence for ionized defect has been reported so far. This study deals with the formation of laser-induced defects and PL measurements when the electrical field applied to the pure-silica glass during ArF (6.4eV) excimer laser irradiation at room temperature. As a result, strong correlation was observed between 650 nm (1.9eV) luminescence band and negatively charged ≡Si-O^- defect in oxygen-surplus silica glasses.
湘南工科大学の論文
1993-03-31