Characterization of GaSb Anodic Oxide Grown in a Solution of 3% Tartaric Acid and Ethylene Glycol with pH=2 and pH=5.5 using Ellipsometory and XPS

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概要

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• A chemical depth profile of anodic oxide on GaSb, which was grown in a solution of 3% tartaric acid and ethylene glycol adjusted to pH=2 and pH=5.5, was investigated by using the XPS and the ellipsometory. The constant current anodic oxidation in the solution with pH=5.5 was able to control well the thickness of the oxide layer by the terminating voltage at which the oxidation was stopped. The oxidized gallium was distributed uniformly throughout the oxide layer, but the increase of the oxidized gallium was observed near the oxide-semiconductor interface. Thc oxidized antimony in the oxide layer was less than the oxide gallium and the decrease of the oxidized antimony was measured near the interface. Small pile-up of the elemental antimony was also detected at the interface.

• 鈴鹿工業高等専門学校の論文
• 2003-01-31

著者

• Kitamura Noboru

  鈴鹿工業高等専門学校

関連論文

• Characterization of GaSb Anodic Oxide Grown in a Solution of 3% Tartaric Acid and Ethylene Glycol with pH=2 and pH=5.5 using Ellipsometory and XPS

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