AuZn/p-lnPオーミックコンタクトに関する一考察

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概要

• 論文の詳細を見る

• We investigated the electrical and metallurgical behaviors of AuZn ohmic contacts formed on p-type InP. We also evaluated the effect the Zn content in the AuZn/p-type InP metallization system had on the specific contact resistance and the role of Au and Zn in achieving low-resistance ohmic contact. We found that the specific contact resistance was as low as 8 x 10^<-5> Ω・cm^2 when the Zn content was as small as 0.4 wt.% and that the concentration of Zn at the metal/InP interface was as small as the detection limit during Auger electron spectroscopic measurement. We presumed that the thermionic emission current governed the current-voltage characteristics of the AuZn / p-type InP ohmic contact.

• 和歌山大学の論文
• 2003-02-27

著者

• 大坪 睦之

  Department of Engineering, Faculty of Education, Wakayama University

• 大坪 睦之

  Department Of Engineering Faculty Of Education Wakayama University

• 南 良輝

  Department of Engineering, Faculty of Education, Wakayama University

• 南 良輝

  Department Of Engineering Faculty Of Education Wakayama University

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• AuZn/p-lnPオーミックコンタクトに関する一考察

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