KD_2PO_4 単結晶の育成とその電気伝導度 (II)

概要

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Recently, KDP (kalium dihydrogen phosphate) crystal is used for the high speed shutter or the modulator of Laser by an electro-optic effect of it. In these cases, as the high voltage has to be applied to it's crystal plate, a breakdown voltage of the crystal will be required a fairly high value. In these points of view, a curie point of KD_2PO_4 is higher than KH_2PO_4 by 90℃, and then an electro-optic coefficient γ_<63> of it is -70×10^<-8> (statvolts/cm)^<-1>, so that, it is about 2.2 times as much as KH_2PO_4 crystal. Therefore, KD_2PO_4 crystal has the advantage that the applied voltage for the crystal plate is enough lower than that of KH_2PO_4. We have taken notice of these facts, as a first step, we studied for the growth of a single crystal in N_2 gas atmosphere of which had been the synthesized KD_2PO_4 by means of 76% D_2O. As the result. we know that the growing speed of crystals is considerably higher in c-axis than in a or b-axis, therefore, tends to grow a long and slender crystal, and then it will be able to grow more stably at the lower temperature (nearby 45℃) than the high temperature (nearby 55℃). Further, we studied the temperature characteristics of an electric conductivity in the direction of each crystal axis, also, we know that it has the value of 10^<-10>℧/cm∿10^<-8>℧/cm, and increases exponentially according to the temperature.
山梨大学の論文
1968-12-20