6H-Sic上へ成長したAINのモルフォロジーと電気的特性
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概要
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AlN/6H-SiC MIS structures were investigated by the use of AlN grown by MOCVD. When AlN grew heteroepitaxially on the 6H-SiC (000l), the shape of scratch on 6H-SiC remained at AlN films. When we used 3.5゜off axis 6H-SiC, AlN grew in step-flow condition and the traces of defect were wiped out. When AlN was grown on the Si-terminated (0001) surface of 6H-SiC with 3.5゜off axis, best characteristics of the MIS structures were obtained.