Absorption Characteristics of Si_3N_4 Ablation Layer Plasma
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The equilibrium composition and spectral absorption coefficient of Si_3N_4 ablation layer plasmas have been calculated for temperature of 3000 to 9000 K, layer thickness of 0 to 0.5cm, and pressure of 2 to 5 atm. In the calculation of radiation, molecular bands, atomic lines and continuum processes are included. These results are applied to a simple shock layer model to assess the effectiveness of the ablation layers for a blockage of high-temperature radiation from a stagnation shock layer composed of hydrogen and helium. The results show that the photoionization process of a Si atom is mainly responsible for blocking the radiation, and that the Si_3N_4 ablation layer is very effective in reducing the radiative heating due to high-energy photons.
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