High On/Off Ratio and Very Low Leakage in p^+/n and n^+/p Germanium/Silicon Heterojunction Diodes
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概要
- 論文の詳細を見る
- 2013-02-25
著者
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CHIEN Chao-Hsin
Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University
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LUO Guang-Li
National Nano Device Laboratories
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CHEN Che-Wei
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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CHUNG Cheng-Ting
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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LIN Jyun-Chih
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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CHIEN Chao-Hsin
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
関連論文
- The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
- Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal--Oxide--Semiconductor Technology
- 2-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory
- High On/Off Ratio and Very Low Leakage in p^+/n and n^+/p Germanium/Silicon Heterojunction Diodes