Design of a Readout Circuit for Improving the SNR of Satellite Infrared Time Delay and Integration Arrays

スポンサーリンク

概要

• 論文の詳細を見る

• This paper presents a novel CMOS readout circuit for satellite infrared time delay and integration (TDI) arrays. An integrate-while-read method is adopted, and a dead-pixel-elimination circuit for solving a critical problem of the TDI scheme is integrated within a chip. In addition, an adaptive charge capacity control method is proposed to improve the signal-to-noise ratio (SNR) for low-temperature targets. The readout circuit was fabricated with a 0.35-µm CMOS process for a 500×4 mid-wavelength infrared (MWIR) HgCdTe detector array. Using the circuit, a 90% background-limited infrared photodetection (BLIP) is satisfied over a wide input range (∼200-330K), and the SNR is improved by 11dB for the target temperature of 200K.

• The Institute of Electronics, Information and Communication Engineersの論文
• 2012-08-01

著者

• Lee Hee

  The Kaist

• Woo Doo

  The Catholic University Of Korea

• KIM Chul

  the Samsung Electronics Co.

関連論文

• Pixel-Level ADC with Two-Step Integration for 2-D Microbolometer IRFPA
• Design of a Readout Circuit for Improving the SNR of Satellite Infrared Time Delay and Integration Arrays

スポンサーリンク