Anisotropy of Drift Velocity in Electron Transport Simulation in Silicon

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概要

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• Ensemble Monte Carlo simulation based on analytic band model has been researched and developed for electron transport in silicon. The simulation shows anisotropy of drift velocity for different directions of electric fields as in the case of full band model. This phenomenon is due to the anisotropy of electron effective masses in X valley.

• 2012-11-01

著者

• Osada Yoshihiro

  Kurume National College Of Technology

関連論文

• Anisotropy of Drift Velocity in Electron Transport Simulation in Silicon

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