Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications
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概要
- 論文の詳細を見る
- 2012-09-25
著者
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TAKAHASHI Tsuyoshi
Devices and Materials Laboratories, Fujitsu Laboratories Ltd.
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SATO Masaru
Devices and Materials Laboratories, Fujitsu Laboratories Ltd.
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NAKASHA Yasuhiro
Devices and Materials Laboratories, Fujitsu Laboratories Ltd.
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HARA Naoki
Devices and Materials Laboratories, Fujitsu Laboratories Ltd.
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Takahashi Tsuyoshi
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Hara Naoki
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sato Masaru
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
関連論文
- Energy Band Control of GaAsSb-Based Backward Diodes to Improve Sensitivity of Millimeter-Wave Detection
- Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications
- Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications