Diamond Junction Field-Effect Transistors with Selectively Grown n^+-Side Gates
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概要
- 論文の詳細を見る
- 2012-09-25
著者
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Iwasaki Takayuki
Department Of Neurology Faculty Of Medicine Tokyo Medical And Dental University
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MAKINO Toshiharu
JST-CREST
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TAKEUCHI Daisuke
JST-CREST
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OKUSHI Hideyo
JST-CREST
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YAMASAKI Satoshi
JST-CREST
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HOSHINO Yuto
Department of Physical Electronics, Tokyo Institute of Technology
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TSUZUKI Kohei
Department of Physical Electronics, Tokyo Institute of Technology
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KATO Hiromitsu
JST-CREST
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OGURA Masahiko
JST-CREST
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MATSUMOTO Tsubasa
JST-CREST
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HATANO Mutsuko
Department of Physical Electronics, Tokyo Institute of Technology
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IWASAKI Takayuki
Department of Physical Electronics, Tokyo Institute of Technology
関連論文
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- Diamond Junction Field-Effect Transistors with Selectively Grown n-Side Gates
- Diamond Junction Field-Effect Transistors with Selectively Grown n^+-Side Gates