Fine Crystallographic Facets of Photonic Crystal Voids Embedded in GaN-Based Semiconductor by Mass Transport
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概要
- 論文の詳細を見る
- 2012-07-25
著者
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Uchida Takeshi
Optics Technology Development Center Canon Inc.
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Numata Aihiko
Optics Technology Development Center Canon Inc.
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KAWASHIMA Takeshi
Optics Technology Development Center, Canon Inc.
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KAWASHIMA Shoichi
Optics Technology Development Center, Canon Inc.
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NAGATOMO Yasuhiro
Optics Technology Development Center, Canon Inc.
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HORI Yuichiro
Optics Technology Development Center, Canon Inc.
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IWASE Hideo
Optics Technology Development Center, Canon Inc.
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HOSHINO Katsuyuki
Optics Technology Development Center, Canon Inc.
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UCHIDA Mamoru
Optics Technology Development Center, Canon Inc.
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Hori Yuichiro
Optics Technology Development Center Canon Inc.
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Kawashima Shoichi
Optics Technology Development Center Canon Inc.
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Kawashima Takeshi
Optics Technology Development Center Canon Inc.
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Iwase Hideo
Optics Technology Development Center Canon Inc.
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Hoshino Katsuyuki
Optics Technology Development Center Canon Inc.
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Nagatomo Yasuhiro
Optics Technology Development Center Canon Inc.
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Uchida Mamoru
Optics Technology Development Center Canon Inc.
関連論文
- Fine Crystallographic Facets of Photonic Crystal Voids Embedded in GaN-Based Semiconductor by Mass Transport
- Fine Crystallographic Facets of Photonic Crystal Voids Embedded in GaN-Based Semiconductor by Mass Transport