Crystal Growth of Silicate Phosphors from the Vapor Phase
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概要
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Well-crystallized Ba2SiO4: Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400-1600°C from the SiO2 source (or SiO powder) in a reducing atmosphere. The formed SiO gas was transported by 95 vol% Ar - 5 vol% H2 gas and reacted with the raw material powders. The emission intensity of the Ba2SiO4: Eu2+ phosphor synthesized by the new vapor phase technique is about 2.6 times higher than that of a conventional solid-state reaction sample.
- （社）電子情報通信学会の論文
- 2011-11-01
著者
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Sakamoto Tatsuya
Graduate School Of Biosphere Science Hiroshima University
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Toda K
Graduate School Of Science And Technology Niigata University
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Uematsu Kazuyoshi
Department Of Chemistry And Chemical Engineering Faculty Of Engineering Niigata University
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Toda K
Niigata Univ. Niigata Jpn
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Sakamoto Tatsuya
Graduate School Of Science And Technology Niigata University
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ISHIGAKI Tadashi
Center for Transdiciplinary Research, Niigata University
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TODA Kenji
Center for Transdiciplinary Research, Niigata University
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SATO Mineo
Center for Transdiciplinary Research, Niigata University
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Ishigaki Tadashi
Center For Transdiciplinary Research Niigata University
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