A Single Amplifier-Based 12-bit 100 MS/s 1 V 19 mW 0.13 μm CMOS ADC with Various Power and Area Minimized Circuit Techniques
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概要
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This work describes a 12-bit 100MS/s 0.13µm CMOS three-stage pipeline ADC with various circuit design techniques to reduce power and die area. Digitally controlled timing delay and gate-bootstrapping circuits improve the linearity and sampling time mismatch of the SHA-free input network composed of an MDAC and a FLASH ADC. A single two-stage switched op-amp is shared between adjacent MDACs without MOS series switches and memory effects by employing two separate NMOS input pairs based on slightly overlapped switching clocks. The interpolation, open-loop offset sampling, and two-step reference selection schemes for a back-end 6-bit flash ADC reduce both power consumption and chip area drastically compared to the conventional 6-bit flash ADCs. The prototype ADC in a 0.13µm CMOS process demonstrates measured differential and integral non-linearities within 0.44LSB and 1.54LSB, respectively. The ADC shows a maximum SNDR and SFDR of 60.5dB and 71.2dB at 100MS/s, respectively. The ADC with an active die area of 0.92mm2 consumes 19mW at 100MS/s from a 1.0V supply. The measured FOM is 0.22pJ/conversion-step.
- 2011-08-01
著者
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Park Seung-jae
The Department Of Electronic Engineering Sogang University
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Lee Seung-hoon
The Department Of Electronic Engineering Sogang University
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KOO Byeong-Woo
the Department of Electronic Engineering, Sogang University
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AHN Gil-Cho
the Department of Electronic Engineering, Sogang University
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Ahn Gil-cho
The Department Of Electronic Engineering Sogang University
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Koo Byeong-woo
The Department Of Electronic Engineering Sogang University