Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs
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概要
- 論文の詳細を見る
The asymmetrical halo and dual-material gate structure is used in the surrounding-gate metal-oxide-semiconductor field effect transistor (MOSFET) to improve the performance. By treating the device as three surrounding-gate MOSFETs connected in series and maintaining current continuity, a comprehensive drain current model is developed for it. The model incorporates not only channel length modulation and impact ionization effects, but also the influence of doping concentration and vertical electric field distributions. It is concluded that the device exhibits increased current drivability and improved hot carrier reliability. The derived analytical model is verified with numerical simulation.
- 2011-06-01
著者
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Liang Feng
Department Of Microelectronics Xi'an Jiaotong University
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Li Zunchao
Department Of Microelectronics Xi'an Jiaotong University
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Mei Kuizhi
Institute Of Artificial Intelligence And Robotics Xi'an Jiaotong University
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XU Jinpeng
Department of Microelectronics, Xi'an Jiaotong University
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LIU Linlin
Department of Microelectronics, Xi'an Jiaotong University
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Xu Jinpeng
Department Of Microelectronics Xi'an Jiaotong University
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Liu Linlin
Department Of Microelectronics Xi'an Jiaotong University
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Liang Feng
Department of Environmental Chemistry and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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