Impact of Mixture Gas Plasma of N_2 and O_2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 2011-09-25
著者
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SANO Michihiro
Research & Development Center, Stanley Electric Co., Ltd.
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Kato Hiroyuki
Research & Development Center Stanley Electric Co. Ltd.
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OGAWA Akio
Research & Development Center, Stanley Electric Co., Ltd.
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Yamamuro Tomofumi
Research & Development Center, Stanley Electric Co., Ltd., Yokohama 225-0014, Japan
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Kyotani Chizu
Research & Development Center, Stanley Electric Co., Ltd., Yokohama 225-0014, Japan
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- Effect of O/Zn Flux Ratio on Crystalline Quality of ZnO Films Grown by Plasma-Assisted Molecular Beam Epitaxy
- Impact of Mixture Gas Plasma of N_2 and O_2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy
- The Role of Surface Chemistry in Growth and Material Properties of ZnO Epitaxial Layers Grown on $a$-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy
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