Preparation and Properties of Cu<sub>2</sub>ZnSnS<sub>4</sub> Absorber and Cu<sub>2</sub>ZnSnS<sub>4</sub>/Amorphous Silicon Thin-Film Solar Cell
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概要
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Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) films were successfully fabricated on glass by sulfurizing the sputtered Zn/Sn/Cu multilayer precursor. The preferred (112) orientation was observed by X-ray diffraction and the Raman peaks at 251, 285, 333, and 359 cm-1 were detected. The optical band energy of CZTS film was estimated to be about 1.5 eV. Finally, a novel CZTS/amorphous silicon ($\alpha$-Si) solar cell was prepared. The open circuit voltage and the short circuit current density were 510 mV and 8.1 mA/cm2, respectively.
- 2011-07-25
著者
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Zhang Lei
College Of Chemistry Jilin University
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Jiang Feng
College Of Life Sciences Peking University
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Wang Wei
College Of Bioengineering Dalian University
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SHEN Honglie
College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics
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