A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors

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概要

• 論文の詳細を見る

• This paper presents a voltage reference that utilizes the virtually diode-connected MOS transistors, biased in the weak-inversion region. The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity, and hence improves the PSRR. The circuit is designed and simulated in a standard 0.18µm CMOS technology. The simulation results in HSPICE indicate the successful operation of the circuit as follows: the PSRR at DC frequency is 86dB and for the temperature range from -55°C to 125°C, the variation of the output reference voltage is less than 66ppm/°C.

• （社）電子情報通信学会の論文
• 2010-12-01

著者

• Shamsi Hossein

  Electrical Faculty K.n. Toosi University Of Technology

• Kazemi Mehrshad

  Islamic Azad University

• Souri Kianoush

  Electrical Faculty K. N. Toosi University Of Technology

• SOURI Kamran

  Electronic Instrumentation Laboratory, Delft University of Technology

• Shamsi Hossein

  Electrical Faculty K. N. Toosi University Of Technology

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