Uncooled Infrared Radiation Focal Plane Array with Low Noise Pixel Driving Circuit
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概要
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We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35µm CMOS technology and bulk- micromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the sensor chip by designing the current source NMOS sufficiently large, and optimized the operating current of pixel pn-junctions.
- 2010-11-01
著者
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Ueno Risako
Toshiba Corporate Research & Development Center
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Yagi Hitoshi
Toshiba Corporate Research & Development Center
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Funaki Hideyuki
Toshiba Corporate Research & Development Center
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Ishii Koichi
Toshiba Corporate Research & Development Center
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Sasaki Keita
Toshiba Corporate Research & Development Center
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HONDA Hiroto
Toshiba Corporate Research & Development Center
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KWON Honam
Toshiba Corporate Research & Development Center
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OGATA Masako
Toshiba Corporate Research & Development Center
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FUJIWARA Ikuo
Toshiba Corporate Research & Development Center
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SUZUKI Kazuhiro
Toshiba Corporate Research & Development Center
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Kwon Honam
Toshiba Corporate Research & Development Center
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Ogata Masako
Toshiba Corporate Research & Development Center
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Honda Hiroto
Toshiba Corporate Research & Development Center
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Fujiwara Ikuo
Toshiba Corporate Research & Development Center