Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Direct Transfer Printing

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概要

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• This letter describes the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) by direct transfer printing. An a-IGZO layer and a silicon dioxide (SiO2) layer were sequentially sputtered on a poly(dimethylsiloxane) (PDMS) stamp; the stamp was then pressed onto a glass substrate on which a gate metal had been previously deposited. Then, a-IGZO/SiO2 layers were successfully transferred by simply releasing the stamp from the substrate; a bottom-gate TFT was finally constructed. The measured current--voltage characteristics exhibited good field-effect mobility exceeding 10 cm2 V-1 s-1. The on/off current ratio and subthreshold slope were $4\times 10^{5}$ and 0.86 V/decade, respectively.

• 2010-10-25

著者

• Adachi Susumu

  Technology Research Laboratory Shimadzu Corporation

関連論文

• Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Direct Transfer Printing

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