405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material
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概要
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We have developed a high resolution resist for laser thermal lithography and a fabrication method for this resist. We designed a resist material which has specific desired properties. We aimed to raise the gasification temperature and achieve a sharply peaked temperature profile so that holes are formed only in the center of the laser spot. We were able to perform lithography with a half pitch of 40 nm. Furthermore, using the result of this lithography as a dry etching mask, we were able to perform dry etching on a number of materials, including SiO2 and sapphire.
- 2009-12-25
著者
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Kanazawa Yoshinori
Research And Development Management Headquarters Fujifilm Corporation
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Watanabe Tetsuya
Research Institute Of Biological Resources And Functions National Institute Of Advanced Industrial S
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Ichikawa Kimio
Research And Development Management Headquarters Fujifilm Corporation
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Usami Yoshihisa
Research and Development Management Headquarters, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, J
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Taga Kazuaki
Research and Development Management Headquarters, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, J
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Kawai Hiroshi
Research and Development Management Headquarters, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, J
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Taga Kazuaki
Research And Development Management Headquarters Fujifilm Corporation
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Watanabe Tetsuya
Research And Development Management Headquarters Fujifilm Corporation
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Kawai Hiroshi
Research And Development Management Headquarters Fujifilm Corporation
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