An Improved Nonlinear Circuit Model for GaAs Gunn Diode in W-Band Oscillator
スポンサーリンク
概要
- 論文の詳細を見る
An improved nonlinear circuit model for a GaAs Gunn diode in an oscillator is proposed based on the physical mechanism of the diode. This model interprets the nonlinear harmonic character on the Gunn diode. Its equivalent nonlinear circuit of which can assist in the design of the Gunn oscillator and help in the analysis of the fundamental and harmonic characteristics of the GaAs Gunn diode. The simulation prediction and the experiment of the Gunn oscillator show the feasibility of the nonlinear circuit model for the GaAs Gunn oscillator.
- （社）電子情報通信学会の論文
- 2009-12-01
著者
-
Fan Yong
University Of Electronic Science And Technology Of China
-
ZHANG Bo
University of Electronic Science and Technology of China
-
ZHANG Yonghong
University of Electronic Science and Technology of China
-
Fan Yong
Univ. Electronic Sci. And Technol. Of China Chengdu Chn
関連論文
- An Improved Nonlinear Circuit Model for GaAs Gunn Diode in W-Band Oscillator
- High-Performance 110-140-GHz Broadband Fixed-Tuned Varistor Mode Schottky Diode Tripler Incorporating CMRC for Submillimeter-Wave Applications