High Speed 1.1-μm-Range InGaAs-Based VCSELs

概要

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We have developed InGaAs-based VCSELs operating around 1.1µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25Gbps 100°C error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3, 000 hours under operation temperature of 150°C and current density of 19kA/cm2. We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24GHz and a relaxation oscillation frequency of 27GHz were achieved. 40Gbps error-free operation was also demonstrated.
（社）電子情報通信学会の論文
2009-07-01