A Low Noise CMOS Low Dropout Regulator with an Area-Efficient Bandgap Reference

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概要

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• In a low dropout (LDO) linear regulator whose reference voltage is supplied by a bandgap reference, double stacked diodes increase the effective junction area ratio in the bandgap reference, which significantly lowers the output spectral noise of the LDO. A low noise LDO with the area-efficient bandgap reference is implemented in 0.18µm CMOS. An effective diode area ratio of 105 is obtained while the actual silicon area is saved by a factor of 4.77. As a result, a remarkably low output noise of 186nV/sqrt(Hz) is achieved at 1kHz. Moreover, the dropout voltage, line regulation, and load regulation of the LDO are measured to be 0.3V, 0.04%/V, and 0.46%, respectively.

• （社）電子情報通信学会の論文
• 2009-05-01

著者

• Won Kwang-ho

  Korea Electronics Technology Institute

• HAN Sangwon

  Department of Radio Science and Engineering, Kwangwoon University

• KIM Jongsik

  Department of Radio Science and Engineering, Kwangwoon University

• SHIN Hyunchol

  Department of Radio Science and Engineering, Kwangwoon University

• Kim Jongsik

  Department Of Radio Science And Engineering Kwangwoon University

• Kim Jongsik

  Department Of Mathematics Seoul National University

• Han Sangwon

  Department Of Radio Science And Engineering Kwangwoon University

• Shin Hyunchol

  Department Of Radio Science And Engineering Kwangwoon University

関連論文

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