Analysis and Design of Sub-Threshold R-MOSFET Tunable Resistor
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概要
- 論文の詳細を見る
The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOSFET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with discussion on design implication and consideration. Experiments and simulations are provided to validate the theoretical analysis and design, and to verify the feasibility at a supply voltage as low as 0.5V using a low-threshold devices in a 1.8-V 0.18µm CMOS process.
- 2009-01-01
著者
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Khumsat Phanumas
Department Of Electrical Engineering Faculty Of Engineering Prince Of Songkla University
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Worapishet Apisak
Mahanakorn Microelectronic Research Center (mmrc) Mahanakorn University Of Technology
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