Avalanche Amplification in Silicon Lateral Photodiode Fabricated by Standard 0.18μm CMOS Process

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概要

• 論文の詳細を見る

• A silicon lateral photodiode is fabricated by standard 0.18µm CMOS process, and the optical detection property is characterized. The photodiode has interdigital electrode structure with the electrode width of 0.22µm and the electrode spacing of 0.6µm. At 830nm wavelength, the responsivity is 0.12A/W at low bias voltage, and is increased to 0.6A/W due to avalanche amplification. The bandwidth is also enhanced from 12MHz at low bias voltage to 100MHz at the bias voltage close to the breakdown voltage.

• （社）電子情報通信学会の論文
• 2008-11-01

著者

• IIYAMA Koichi

  Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Tech

• Iiyama Koichi

  Division Of Electrical Engineering And Computer Science Graduate School Of Natural Science And Techn

• SANNOU Noriaki

  Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Tech

• TAKAMATSU Hideki

  Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Tech

• Sannou Noriaki

  Division Of Electrical Engineering And Computer Science Graduate School Of Natural Science And Techn

• Takamatsu Hideki

  Division Of Electrical Engineering And Computer Science Graduate School Of Natural Science And Techn

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• Avalanche Amplification in Silicon Lateral Photodiode Fabricated by Standard 0.18μm CMOS Process

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