Current Status and Future Prospects of SiC Power JFETs and ICs

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概要

• 論文の詳細を見る

• This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35MHz will be discussed.

• （社）電子情報通信学会の論文
• 2008-07-01

著者

• Su Ming

  Siclab Dept. Of Electrical And Computer Engineering Rutgers University

• Zhao Jian

  Siclab Dept. Of Electrical And Computer Engineering Rutgers University

• SHENG Kuang

  SiCLAB, Dept. of Electrical and Computer Engineering, Rutgers University

• ZHANG Yongxi

  SiCLAB, Dept. of Electrical and Computer Engineering, Rutgers University

• Sheng Kuang

  Siclab Dept. Of Electrical And Computer Engineering Rutgers University

• Zhang Yongxi

  Siclab Dept. Of Electrical And Computer Engineering Rutgers University

関連論文

• Current Status and Future Prospects of SiC Power JFETs and ICs

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