An Ultra-Low-Voltage Ultra-Low-Power Weak Inversion Composite MOS Transistor : Concept and Applications

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概要

• 論文の詳細を見る

• This work presents an ultra-low-voltage ultra-low-power weak inversion composite MOS transistor. The steady state power consumption and the linear swing signal of the composite transistor are comparable to a single transistor, whereas presenting very high output impedance. This work also presents two interesting applications for the composite transistor; a 1:1 current mirror and an extremely low power temperature sensor, a thermistor. Both implementations are verified in a standard 0.35-μm TSMC CMOS process. The current mirror presents high output impedance, comparable to the cascode configuration, which is highly desirable to improve gain and PSRR of amplifiers circuits, and mirroring relation in current mirrors.

• （社）電子情報通信学会の論文
• 2008-04-01

著者

• Moreno Robson

  Universidade Federal De Itajuba‐unifei Mg Bra

• FERREIRA Luis

  Universidade Federal de Itajuba, UNIFEI

• PIMENTA Tales

  Universidade Federal de Itajuba, UNIFEI

• Ferreira Luis

  Universidade Federal De Itajuba-unifei

• Moreno Robson

  Universidade Federal De Itajuba-unifei

• Pimenta Tales

  Universidade Federal De Itajuba-unifei

関連論文

• An Ultra Low-Voltage Ultra Low-Power CMOS Threshold Voltage Reference(Electronic Circuits)
• An Ultra-Low-Voltage Ultra-Low-Power Weak Inversion Composite MOS Transistor : Concept and Applications

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