ホール蓄積型CMOSイメージセンサの開発
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概要
- 論文の詳細を見る
A new CMOS image sensor using a hole based detector has been developed. The measurement shows that crosstalk is reduced to one-third and dark current is reduced to a thirtieth that of a standard nMOS device. Red-into-green pixel crosstalk is 7% at 650 nm for a 4.3-μm pixel and dark current as low as 6 pA/cm2 at 60°C. Charge capacities of 60, 11 and 4kh+ have been measured for 4.3-, 1.75- and 1.4-μm pixels, respectively.
- 2010-03-01
著者
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藤田 博明
Image Sensor Solutions Eastman Kodak Company
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スティーブンス エリック
Image Sensor Solutions Eastman Kodak Company
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小森 寛文
Image Sensor Solutions Eastman Kodak Company
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ドアン ハン
Image Sensor Solutions Eastman Kodak Company
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カイアン ジェフリー
Image Sensor Solutions Eastman Kodak Company
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パークス クリストファー
Image Sensor Solutions Eastman Kodak Company
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シー ガン
MEMC Electronic Materials Inc
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ティバラス クリスチャン
Image Sensor Solutions Eastman Kodak Company
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ウー ジアン
Image Sensor Solutions Eastman Kodak Company