Fatigue-free samarium-modified bismuth titanate having large remanent polarization and charge-retaining ability (第5回日韓資源リサイクル・材料科学に関する国際シンポジウム特集号)
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概要
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Fatigue-free and highly c-axis oriented Bi4-xSmxTi3O12 (BSmT; x = 0.85) thin films were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metal-organic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (Pr) and the nonvolatile charge as compared to those of the Bi4-xLaxTi3O12 (BLT; x = 0.75) film capacitor, recently known as a promising candidate for nonvolatile memories. The 2Pr value of the BSmT capacitor was 49 μC/cm2 at an applied voltage of 10 V while the net nonvolatile charge was as high as 20 μC/cm2 and remained essentially constant up to 4.5 × 1010 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor showed excellent charge-retention characteristics with its sensing margin of 17 μC/cm2 and a strong resistance against the imprinting failure.
- 環境資源工学会の論文
- 2008-09-10
著者
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Chon Uong
Functional Materials Res. Dep. Res. Inst. Of Industrial Sci. And Technol. (rist)
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CHON Uong
Materials Research Center, Research Institute of Industrial Science and Technology (RIST)
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KIM Ki
Materials Research Center, Research Institute of Industrial Science and Technology (RIST)
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LEE Cheol
Materials Research Center, Research Institute of Industrial Science and Technology (RIST)
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Kim Ki
Functional Materials Res. Dep. Res. Inst. Of Industrial Sci. And Technol. (rist)
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Kim Ki
Materials Engineering Department Korea University Of Technology And Education
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Lee Cheol
Materials Research Center Research Institute Of Industrial Science And Technology (rist)
関連論文
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