Theoretical Study of Acceptor--Donor Complexes in 4H-SiC

スポンサーリンク

概要

• 論文の詳細を見る

• The total energies and electronic structures of acceptor--donor complexes in 4H-SiC were investigated using ab initio calculation methods. Our calculations covered the A2D complex consisting of substitutional two-acceptor atoms from group-III elements and a nitrogen (N) donor atom. Results indicate some A2D complexes can exist stably, and solid solubilities of Al2N and Ga2N may be greatly enhanced. We also found that Ga2N introduces a shallower acceptor level compared to conventional acceptor atoms such as B and Al. Our results suggest that Ga+/N+ co-implantation is one of the promising candidates for a doping method to realize low-resistivity p-type 4H-SiC.

• 2008-11-25

著者

• Miyata Masanori

  Graduate School Of Science And Technology Kwansei Gakuin University

• Hayafuji Yoshinori

  Graduate School Of Science And Technology Kwansei Gakuin University

関連論文

• Theoretical Study of the Stability of X@B6 and X@B12 Clusters: $\text{X}=\text{H--Br}$ in Crystalline Silicon
• Electronic Structures of 4H-SiC with Group I and VII Elements: First-Principles Study of Possible p-Type Doping
• Theoretical Study of Acceptor--Donor Complexes in 4H-SiC

スポンサーリンク