Modeling Titanium Oxide Growth by Chemical Vapor Deposition Using Titanium Tetra Isopropoxide

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概要

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• Titanium oxide (TiO2) thin films were grown on Si(100) substrates using the chemical vapor deposition (CVD) of titanium tetra isopropoxide (TTIP; Ti(OCH(CH3)2)4). The distribution of the growth rate in the reactor and the step coverage of films grown in the range 593–1173 K could was using our “simple reaction model.” The TTIP changed into TiO2 directly via a surface reaction. The surface reaction rate constant was determined by comparing the step coverage of grown and simulated films. The activation energy of the surface reaction was 212 kJ/mol (T < 710 K).

• 社団法人 化学工学会の論文
• 2008-08-01

著者

• Murakami Hiroshi

  Graduate School Of Engineering Tokai University

• AKIYAMA Yasunobu

  Graduate School of Engineering, Tokai University

• SHITANAKA Katsuya

  Graduate School of Engineering, Tokai University

• Shitanaka Katsuya

  Graduate School Of Engineering Tokai University

• Akiyama Yasunobu

  Graduate School Of Engineering Tokai University

関連論文

• Modeling Titanium Oxide Growth by Chemical Vapor Deposition Using Titanium Tetra Isopropoxide

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