Effect of Boron-Nitride Formation at the Interface of Diffusion Barrier in Tungsten Polymetal Gate Stacks on Gate Interfacial Resistance
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
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Yang H.
R&d Division Hynix Semiconductor Inc.
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Kim T.
R&d Division Hynix Semiconductor Inc.
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Cho H.
R&d Division Hynix Semiconductor Inc.
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SUNG M.
R&D Division, Hynix Semiconductor Inc.
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LIM K.
R&D Division, Hynix Semiconductor Inc.
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KIM Y.
R&D Division, Hynix Semiconductor Inc.
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CHO H.
R&D Division, Hynix Semiconductor Inc.
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LEE S.
R&D Division, Hynix Semiconductor Inc.
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JANG S.
R&D Division, Hynix Semiconductor Inc.
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JOO M.
R&D Division, Hynix Semiconductor Inc.
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LEE J.
R&D Division, Hynix Semiconductor Inc.
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KIM T.
R&D Division, Hynix Semiconductor Inc.
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YOUN T.
R&D Division, Hynix Semiconductor Inc.
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KIM J.
R&D Division, Hynix Semiconductor Inc.
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KIM G.
R&D Division, Hynix Semiconductor Inc.
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HWANG Y.
R&D Division, Hynix Semiconductor Inc.
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YANG H.
R&D Division, Hynix Semiconductor Inc.
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KU J.
R&D Division, Hynix Semiconductor Inc.
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Lee S.
R&d Division Hynix Semiconductor Inc.
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Kim Y.
R&d Division Hynix Semiconductor Inc.
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Kim J.
R&d Division Hynix Semiconductor Inc.
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Ku J.
R&d Division Hynix Semiconductor Inc.