In-Situ X-Ray Diffraction during Semiconductor Nanostructure Growth

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• TAKAHASI Masamitu

  Synchrotron Radiation Research Center, Japan Atomic Energy Agency

• Takahasi Masamitu

  Synchrotron Radiation Research Center Japan Atomic Energy Agency

関連論文

• In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
• X-Ray Diffractometer for Studies on Molecular-Beam-Epitaxy Growth of III-V Semiconductors
• In-Situ X-Ray Diffraction during Semiconductor Nanostructure Growth
• Time-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb-Irradiated Growth Interruption

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