Finger Length Optimization for AlGaN/GaN HEMT and InGaP/GaAs HBT by Using FDTD Electromagnetic and Device Co-Simulation Technique
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Ishikawa Ryo
Advanced Wireless Communication Research Center (awcc) The University Of Electro-communications
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Honjo Kazuhiko
Advanced Wireless Communication Research Center (awcc) The University Of Electro-communications
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CHOKKI Akira
Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications
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SHINOHARA Yasuta
Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications
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Chokki Akira
Advanced Wireless Communication Research Center (awcc) The University Of Electro-communications
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Shinohara Yasuta
Advanced Wireless Communication Research Center (awcc) The University Of Electro-communications
関連論文
- Finger Length Optimization for AlGaN/GaN HEMT and InGaP/GaAs HBT by Using FDTD Electromagnetic and Device Co-Simulation Technique
- Low Power Consumption and Low Noise InGaP/GaAs HBT MMIC Amplifier for Full-Band UWB Receiver