ICP Reactive Ion Etching with SiCl_4 Gas for Recessed Gate AlGaN/GaN HFET

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Matsuura K.

  Institute of Plasma Physics Nagoya University

• OHNO Y.

  Institute of Industrial Science, University of Tokyo

• Ao J.-p.

  Institute Of Technology And Science The University Of Tokushima

• Hiramoto M.

  Samco Inc.

• KIKUTA D.

  Institute of Technology and Science, The University of Tokushima

• OGIYA H.

  SAMCO Inc.

• KAWAI H.

  POWDEC K. K.

関連論文

• B5-a CONTROL OF HORIZONTAL PLASMA POSITION BY FEEDFORWARD-FEEDBACK SYSTEM WITH DIGITAL COMPUTER IN JIPP T-II TOKAMAK
• Direct Observation of Electron Jet from a Point Contact
• ICP Reactive Ion Etching with SiCl_4 Gas for Recessed Gate AlGaN/GaN HFET

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