Effect of Tensile Strain on Gate and Substrate Currents of strained-Si n-MOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
-
Hoshii T.
Graduate School Of Frontier Science The University Of Tokyo
-
TAKAGI S.
Graduate School of Frontier Science, The University of Tokyo
-
SUGAHARA S.
Graduate School of Frontier Science, The Univ. of Tokyo
-
Sugahara S.
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
関連論文
- Formation of InGaAs-On-Insulator Structures by Epitaxial Lateral Over Growth from (111) Si
- Effect of Tensile Strain on Gate and Substrate Currents of strained-Si n-MOSFETs