Ti-barrier Metal for Robust and Reliable 45nm Node Porous Low-k/Copper Interconnects
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Fujimaki T.
System Lsi Division I Semiconductor Company Toshiba Corporation
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HIGASHI K.
Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation
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YAMAGUCHI H.
Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation
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YOSHO T.
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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SAKATA A.
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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OMOTO S.
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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YAMASHITA S.
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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ENOMOTO Y.
Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation
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MATSUNAGA N.
Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation
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SHIBATA H.
Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation
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Yosho T.
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
関連論文
- Ti-barrier Metal for Robust and Reliable 45nm Node Porous Low-k/Copper Interconnects
- Alpha-Cluster Dominance in the αp Process in Explosive Hydrogen Burning(YKIS2011 papers, Frontier Issues in Physics of Exotic Nuclei)
- Alpha-Cluster Dominance in the αp Process in Explosive Hydrogen Burning