Light emission from two junction Si CMOS LED's (450nm-750nm) with two order increase in emission intensity - Applications for next generation silicon-based optoelectronics
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Du Plessis
University Of Pretoria Carl And Emily Fuchs Institute Of Microelectronics
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SNYMAN L.
Tshwane University of Technology, Department of Electronic Engineering
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AHARONI H.
Ben Gurion University of the Negev, Department of Electronic and Computer Engineering
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Snyman L.
Tshwane University Of Technology Department Of Electronic Engineering
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Aharoni H.
Ben Gurion University Of The Negev Department Of Electronic And Computer Engineering