Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Gate Metallization
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Kim S.
Micro Mechatronics Research Center Kwang-ju Institute Of Science And Technology (k-jist)
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Jang J.
Department Of Environmental Science Konkuk University
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Jang J.
Department Of Information And Communications Gwangju Institute Of Science And Technology
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ADESIDA I.
Micro and Nanotechnology Laboratory University of Illinois at Urbana Champaign
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Adesida I.
Micro And Nanotechnology Laboratory And Department Of Electrical Computer Engineering University Of
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