Improvement of Cell Stability at Low Voltage Operation on 6T-SRAM Cell with 0.1μm Channel Width
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Jung Hyuck-chai
Sram/flash Pa Team Memory Division Semiconductor Business
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Lee Won-seong
Sram/flash Pa Team Memory Division Semiconductor Business
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Koh Kwangok
Sram/flash Pa Team Memory Division Semiconductor Business
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AN Sungsik
SRAM/FLASH PA Team, Memory Division Semiconductor Business
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SON Yangsoo
SRAM/FLASH PA Team, Memory Division Semiconductor Business
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CHO Yeongil
SRAM/FLASH PA Team, Memory Division Semiconductor Business
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NAM Jeongseok
SRAM/FLASH PA Team, Memory Division Semiconductor Business
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KIM Kijoon
SRAM/FLASH PA Team, Memory Division Semiconductor Business
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Kim Kijoon
Sram/flash Pa Team Memory Division Semiconductor Business
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An Sungsik
Sram/flash Pa Team Memory Division Semiconductor Business
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Son Yangsoo
Sram/flash Pa Team Memory Division Semiconductor Business
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Cho Yeongil
Sram/flash Pa Team Memory Division Semiconductor Business
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Nam Jeongseok
Sram/flash Pa Team Memory Division Semiconductor Business