3D Device Simulation for Neutron-induced Latch-up in CMOS Devices
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Yahagi Y.
Production Engineering Research Laboratory Hitachi Ltd.
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YAMAGUCHI H.
Production Engineering Research Laboratory, Hitachi Ltd.
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IBE E.
Production Engineering Research Laboratory, Hitachi Ltd.
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KAMEYAMA H.
Renesas Kodaira Semiconductor Co. Ltd
関連論文
- Single Event Effects of Semiconductor Devices at the Ground (特集 シンポジウム「半導体シングルイベント事象の物理と応用」)
- 3D Device Simulation for Neutron-induced Latch-up in CMOS Devices