A Bias-Dependent Equivalent-Circuit Model of High Performance Evanescently Coupled Photodiode with Partially P-Doped Absorption Layer
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Wu Y.-s.
Department Of Electrical Engineering National Central University
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CHIU W.
Department of Public Health, Taipei Medical College
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LIN D.-M.
Department of Electrical Engineering, National Central University
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HUANG F.-H.
Department of Electrical Engineering, National Central University
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SHI J.-W.
Department of Electrical Engineering, National Central University
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CHAN Y.-J.
Department of Electrical Engineering, National Central University
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Lin D.-m.
Department Of Electrical Engineering National Central University
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Shi J.-w.
Department Of Electrical Engineering National Central University
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Chan Y.-j.
Department Of Electrical Engineering National Central University
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Huang F.-h.
Department Of Electrical Engineering National Central University
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Chiu W.
Department Of Electrical Engineering National Central University
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- A Size-Dependent Equivalent-Circuit Model of High Performance Near-Ballistic-Transport Photodiode
- A Bias-Dependent Equivalent-Circuit Model of High Performance Evanescently Coupled Photodiode with Partially P-Doped Absorption Layer