Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Nakata Ken
Eudyna Devices Inc.
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Yaegassi Seiji
Eudyna Devices Inc.
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KAWASAKI Takeshi
Eudyna Devices Inc.
関連論文
- Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs
- Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications