High Performance fully silicided NiSi:Hf gate on LaAlO_3/GOI n-MOSFET with Little Fermi-level Pinning
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Kwong Dim-lee
Dept. Of Electrical & Computer Engineering The Univ. Of Texas
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Kwong Dim-lee
Dept. Of Ece The University Of Texas
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Chin Albert
Nano Sci. Tech. Ctr. National Chiao Tung Univ. Univ. System Of Taiwan
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Li M.-f.
Si Nano Device Lab. Dept. Of Electrical & Computer Eng. National Univ. Of Singapore
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YU D.
Nano Sci. Tech. Ctr., National Chiao Tung Univ., Univ. System of Taiwan
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CHENG C.
Nano Sci. Tech. Ctr., National Chiao Tung Univ., Univ. System of Taiwan
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ZHU C.
Si Nano Device Lab., Dept. of Electrical & Computer Eng., National Univ. of Singapore
関連論文
- Thermal Stability of Metal Gate Work Functions
- High Performance fully silicided NiSi:Hf gate on LaAlO_3/GOI n-MOSFET with Little Fermi-level Pinning